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| FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET December 2004 FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Features I -4.6 A, -20 V RDS(ON) = 46 m @ VGS = -4.5 V RDS(ON) = 72 m @ VGS = -2.5 V I Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 I Ultra-thin package: less than 0.85 mm height when mounted to PCB I Outstanding thermal transfer characteristics: 4 times better than SSOT-6 I Ultra-low Qg x RDS(ON) figure-of-merit I High power and current handling capability. Applications I Battery management I Load switch I Battery protection General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). S GATE G D Bottom Top (c)2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDZ293P Rev. C FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25C unless otherwise noted Parameter Ratings -20 12 (Note 1a) Units V V A -4.6 -10 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) 1.7 -55 to +150 W C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 C/W Package Marking and Ordering Information Device Marking B Device FDZ293P Reel Size 7" Tape width 8mm Quantity 3000 units Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. VGS = 0V, ID = -250A ID = -250A, Referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A ID = -250A, Referenced to 25C VGS = -4.5V, ID = -4.6A, VGS = -2.5V, ID = -3.6A, VGS = -4.5V, ID = -4.6A, TJ = 125C VGS = -4.5V, VDS = -5V VDS = -5V, ID = -4.6A VDS = -10V, VGS = 0V, f = 1.0MHz -10 13 -0.6 -0.8 3 36 58 47 46 72 65 -20 -13 -1 100 -1.5 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance V mV/C m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0MHz VDD = -10V, ID = -1A, VGS = -4.5V, RGEN = 6 754 167 92 6 pF pF pF 20 20 35 31 11 ns ns ns ns nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -4.6A, VGS = -4.5V 11 10 22 17 7.5 1.5 2.0 2 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Electrical Characteristics TA = 25C unless otherwise noted (Continued) Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.4A Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = -4.6A, diF/dt = 100A/s (Note 2) -1.4 -0.7 17 5 A -1.2 IS V nS nC Notes: 1. RJA is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a) 72C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB b) 157C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Typical Characteristics 10 2.6 -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 -ID, DRAIN CURRENT (A) 8 VGS = -2.0V -2.5V 6 -2.0V 4 -2.5V -3.0V -3.5V -4.5V 2 0 0 0.5 1 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 -ID, DRAIN CURRENT (A) 6 8 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 ID = -4.6A VGS = -4.5V ID = -2.3 A 0.15 0.12 TA = 125C 0.09 0.06 TA = 25C -25 0 25 50 75 100 125 150 0.03 1.5 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 8 VGS = 0V 1 TA = 125C 0.1 25C 0.01 -55C 0.001 6 4 25C TA = 125C 2 -55C 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 1200 ID = -4.6A VDS = -5V -10V CAPACITANCE (pF) f = 1MHz VGS = 0 V 1000 CISS 800 600 400 COSS 200 CRSS 0 0 2 4 6 8 10 4 -15V 3 2 1 0 Qg, GATE CHARGE (nC) 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 20 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 100s 1ms 10ms 100ms 1s 10s DC SINGLE PULSE RJA = 157C/W TA = 25C 15 1 VGS = -4.5V SINGLE PULSE RJA = 157C/W TA = 25C 0.01 0.1 1 10 0.1 5 10 100 0 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 157 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 5 FDZ293P Rev. C www.fairchildsemi.com FDZ293P P-Channel 2.5 V Specified PowerTrench(R) BGA MOSFET Dimensional Pad and Layout A 1.500.10 INDEX SLOT 1 A PKG C L 1.70 1.50 BALL C L C L C L GATE B O0.25 A B C 0.50 0.50 0.0380.025 TOP VIEW LAND PATTERN RECOMMENDATION 1.00 DRAIN 1.00 1 2 3 SOUCE 0.85 MAX STUD, O0.300.02 O0.050 C A B C SEATING PLANE 0.10 C FRONT VIEW PKG C L 0.04 GATE (0.28) (0.60) 0.21 0.16 0.31 0.26 66 SOLDER BALL SIDE VIEW INDEX SLOT (HIDDEN) B A 1 0.50 1.00 BOTTOM VIEW 2 3 BALL, O0.300.02 O0.050 A B 0.50 C 1.00 C L BALL C L NOTES: UNLESS OTHERWISE SPECIFIED A) B) C) ALL DIMENSIONS ARE IN MILLIMETERS. NO JEDEC REGISTRATION REFERENCE AS OF SEPTEMBER 2003. BALL/STUD CONFIGURATION TABLE TERMINAL ID C1,C2,C3 A1 A2,A3,B1,B2,B3 DESIGNATION TERMINAL TYPE DRAIN COPPER STUD GATE BALL SOURCE 6 FDZ293P Rev. C www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14 |
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